Editing Dynamic random-access memory (section)

===To write to memory===
[[File:Square array of mosfet cells write.png|thumb|250px|right|Writing to a DRAM cell]]

To store data, a row is opened and a given column's sense amplifier is temporarily forced to the desired high or low-voltage state, thus causing the bit-line to charge or discharge the cell storage capacitor to the desired value. Due to the sense amplifier's positive feedback configuration, it will hold a bit-line at stable voltage even after the forcing voltage is removed. During a write to a particular cell, all the columns in a row are sensed simultaneously just as during reading, so although only a single column's storage-cell capacitor charge is changed, the entire row is refreshed (written back in), as illustrated in the figure to the right.<ref name="Kenner:24,30"/>