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Insulated-gate bipolar transistor
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==Advantages== The IGBT combines the simple gate-drive characteristics of [[power MOSFET]]s with the high-current and low-saturation-voltage capability of [[Bipolar junction transistor|bipolar transistor]]s. The IGBT combines an isolated-gate [[field-effect transistor|FET]] for the control input and a bipolar power [[transistor]] as a switch in a single device. The IGBT is used in medium- to high-power applications like [[switched-mode power supplies]], [[traction motor]] control and [[induction heating]]. Large IGBT modules typically consist of many devices in parallel and can have very high current-handling capabilities in the order of hundreds of [[ampere]]s with blocking voltages of {{nowrap|6500 [[volts|V]]}}. These IGBTs can control loads of hundreds of [[kilowatts]].
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