Editing Non-volatile memory (section)

=== Magnetoresistive RAM (MRAM) ===
{{Main|Magnetoresistive random-access memory}}

Magnetoresistive RAM stores data in magnetic storage elements called [[magnetic tunnel junctions]] (MTJs). The first generation of MRAM, such as [[Everspin Technologies]]' 4&nbsp;Mbit, utilized field-induced writing. The second generation is developed mainly through two approaches: [[Thermal-assisted switching]] (TAS)<ref name="white paper">The Emergence of Practical MRAM {{cite web |url=http://www.crocus-technology.com/pdf/BH%20GSA%20Article.pdf |title=Crocus Technology &#124; Magnetic Sensors &#124; TMR Sensors |access-date=2009-07-20 |url-status=dead |archive-url=https://web.archive.org/web/20110427022729/http://www.crocus-technology.com/pdf/BH%20GSA%20Article.pdf |archive-date=27 April 2011}}</ref> which is being developed by [[Crocus Technology]], and [[Spin-transfer torque]] (STT) which [[Crocus Technology|Crocus]], [[Hynix]], [[IBM]], and several other companies are developing.<ref>{{cite web|url=http://www.eetimes.com/news/latest/showArticle.jhtml?articleID=218000269|archive-url=https://web.archive.org/web/20120119111746/http://www.eetimes.com/news/latest/showArticle.jhtml?articleID=218000269|archive-date=19 January 2012|url-status=dead|title=Latest News|website=EE{{!}}Times}}</ref>