Editing Semiconductor detector (section)

=== Cadmium telluride and cadmium zinc telluride detectors ===
[[Cadmium telluride]] (CdTe) and [[cadmium zinc telluride]] (CZT) detectors have been developed for use in [[X-ray spectroscopy]] and [[gamma spectroscopy]]. The high density of these materials means they can effectively attenuate X-rays and gamma-rays with energies of greater than 20 [[Electronvolt|keV]] that traditional [[silicon]]-based sensors are unable to detect. The wide [[band gap]] of these materials also means they have high [[Electrical resistivity and conductivity|resistivity]] and are able to operate at, or close to, room temperature (~295K) unlike [[germanium]]-based sensors. These detector materials can be used to produce sensors with different electrode structures for [[Medipix|imaging]] and high-resolution [[HEXITEC|spectroscopy]]. However, CZT detectors are generally unable to match the resolution of germanium detectors, with some of this difference being attributable to poor positive charge-carrier transport to the electrode. Efforts to mitigate this effect have included the development of novel electrodes to negate the need for both polarities of carriers to be collected.<ref>{{cite journal|last=Luke|first=P. N.|date=1994-11-01|title=Unipolar charge sensing with coplanar electrodes -- Application to semiconductor detectors |doi=10.2172/34411|osti=34411|url=https://digital.library.unt.edu/ark:/67531/metadc684991/|doi-access=free}}</ref><!-- someone added this isolated reference --><ref>J. S. Kapustinsky, Nucl. Instrum. Methods A 617 (2010) 546 – 548.</ref>