Editing Epitaxy (section)

==[[Doping (semiconductor)|Doping]]==
An epitaxial layer can be [[Doping (semiconductor)|doped]] during deposition by adding impurities to the source gas, such as [[arsine]], [[phosphine]], or [[diborane]]. [[Dopant|Dopants]] in the source gas, liberated by evaporation or wet etching of the surface, may also diffuse into the epitaxial layer and cause ''autodoping''. The concentration of impurity in the gas phase determines its concentration in the deposited film. Doping can also be achieved by a site-competition technique, where the growth precursor ratios are tuned to enhance the incorporation of vacancies, specific dopant species or vacant-dopant clusters into the lattice.<ref name="Larkin Neudeck Powell Matus pp. 1659–1661">{{cite journal |last1=Larkin |first1=David J. |last2=Neudeck |first2=Philip G. |last3=Powell |first3=J. Anthony |last4=Matus |first4=Lawrence G. |date=1994-09-26 |title=Site-competition epitaxy for superior silicon carbide electronics |journal=Applied Physics Letters |publisher=AIP Publishing |volume=65 |issue=13 |pages=1659–1661 |doi=10.1063/1.112947 |bibcode=1994ApPhL..65.1659L |issn=0003-6951}}</ref><ref name="Zhang Gao Yu Liao pp. 655–668">{{cite journal |last1=Zhang |first1=Xiankun |last2=Gao |first2=Li |last3=Yu |first3=Huihui |last4=Liao |first4=Qingliang |last5=Kang |first5=Zhuo |last6=Zhang |first6=Zheng |last7=Zhang |first7=Yue |date=2021-07-20 |title=Single-Atom Vacancy Doping in Two-Dimensional Transition Metal Dichalcogenides |journal=Accounts of Materials Research |publisher=American Chemical Society (ACS) |volume=2 |issue=8 |pages=655–668 |doi=10.1021/accountsmr.1c00097 |s2cid=237642245 |issn=2643-6728}}</ref><ref name="Holmes-Hewett p.">{{cite journal |last=Holmes-Hewett |first=W. F. |date=2021-08-16 |title=Electronic structure of nitrogen-vacancy doped SmN: Intermediate valence and 4f transport in a ferromagnetic semiconductor |journal=Physical Review B |publisher=American Physical Society (APS) |volume=104 |issue=7 |page= 075124|doi=10.1103/physrevb.104.075124 |bibcode=2021PhRvB.104g5124H |s2cid=238671328 |issn=2469-9950}}</ref>  Additionally, the high temperatures at which epitaxy is performed may allow dopants to [[diffusion|diffuse]] into the growing layer from other layers in the wafer (''out-diffusion'').