Editing Indium tin oxide (section)

===Ambient gas conditions===
For example, using conventional methods but varying the ambient gas conditions to improve the optoelectronic properties<ref>{{cite journal |last1=Marikkannan |first1=M. |last2=Subramanian |first2=M. |last3=Mayandi |first3=J. |last4=Tanemura |first4=M. |last5=Vishnukanthan |first5=V. |last6=Pearce |first6=J. M. |title=Effect of ambient combinations of argon, oxygen, and hydrogen on the properties of DC magnetron sputtered indium tin oxide films |journal=AIP Advances |date=January 2015 |volume=5 |issue=1 |pages=017128 |doi=10.1063/1.4906566 |bibcode=2015AIPA....5a7128M |doi-access=free }}</ref> as, for example, [[oxygen]] plays a major role in the properties of ITO.<ref>{{cite journal |last1=Gwamuri |first1=Jephias |last2=Marikkannan |first2=Murugesan |last3=Mayandi |first3=Jeyanthinath |last4=Bowen |first4=Patrick |last5=Pearce |first5=Joshua |title=Influence of Oxygen Concentration on the Performance of Ultra-Thin RF Magnetron Sputter Deposited Indium Tin Oxide Films as a Top Electrode for Photovoltaic Devices |journal=Materials |date=20 January 2016 |volume=9 |issue=1 |pages=63 |doi=10.3390/ma9010063 |pmid=28787863 |pmc=5456523 |bibcode=2016Mate....9...63G |doi-access=free }}</ref>