Editing Intermetallic (section)

== Applications ==
Examples include [[alnico]] and the [[hydrogen storage]] materials in [[nickel metal hydride]] batteries. [[Nickel aluminide|Ni<sub>3</sub>Al]], which is the hardening phase in the familiar nickel-base [[superalloy|super alloy]]s, and the various [[titanium]] aluminides have attracted interest for [[turbine blade]] applications, while the latter is also used in small quantities for [[grain refinement]] of [[titanium alloy]]s. [[Silicide]]s, intermetallics involving silicon, serve as barrier and contact layers in [[microelectronics]].<ref>{{Cite journal |date=June 1993 |title=Metallization: theory and practice for VLSI and ULSI |journal=Choice Reviews Online |volume=30 |issue=10 |pages=30–5612-30-5612 |doi=10.5860/choice.30-5612 |issn=0009-4978|first=S.P. |last=Murarka |doi-broken-date=1 February 2025 }}</ref> Others include:
* [[Magnetic material]]s e.g. [[alnico]], [[sendust]], Permendur, FeCo, [[Terfenol-D]]
* [[Superconductors]] e.g. [[A15 phases]], [[niobium-tin]]
* [[Hydrogen storage]] e.g. AB<sub>5</sub> compounds ([[nickel metal hydride batteries]])
* [[Shape memory alloy]]s e.g. Cu-Al-Ni (alloys of Cu<sub>3</sub>Al and nickel), [[Nitinol]] (NiTi)
* Coating materials e.g. NiAl
* High-temperature [[structural materials]] e.g. [[nickel aluminide]], Ni<sub>3</sub>Al
* [[Dental amalgam]]s, which are alloys of intermetallics Ag<sub>3</sub>Sn and Cu<sub>3</sub>Sn
* [[Semiconductor device|Gate contact]]/ [[barrier layer]] for [[microelectronics]] e.g. [[Titanium disilicide|TiSi<sub>2</sub>]]<ref>{{cite book
| last = Ohring | first = Milton | title = Materials Science of Thin Films | publisher = Academic Press | year = 2002 | isbn = 9780125249751 | url = {{google books|plainurl=y|id=50jZ8a3_hZgC}} }}</ref>{{rp| 692}}
* [[Laves phase]]s (AB<sub>2</sub>), e.g., MgCu<sub>2</sub>, MgZn<sub>2</sub> and MgNi<sub>2</sub>.

The unintended formation of intermetallics can cause problems. For example, [[Gold-aluminium intermetallic|intermetallics of gold and aluminium]] can be a significant cause of [[wire bonding|wire bond]] failures in [[semiconductor device]]s and other [[microelectronics]] devices. The management of intermetallics is a major issue in the reliability of [[solder]] joints between electronic components.{{cn|date=January 2024}}