Editing Non-volatile memory (section)

=== Phase-change Memory (PCM) ===
{{Main|Phase-change memory}}

Phase-change memory stores data in [[chalcogenide glass]], which can reversibly change the phase between the amorphous and the [[Crystalline|crystalline state]], accomplished by heating and cooling the glass.  The [[crystalline]] state has low resistance, and the amorphous phase has high resistance, which allows currents to be switched ON and OFF to represent digital 1 and 0 states.<ref>{{Cite journal|last1=Hudgens|first1=S.|last2=Johnson|first2=B.|date=November 2004|title=Overview of Phase-Change Chalcogenide Nonvolatile Memory Technology|url=https://www.cambridge.org/core/journals/mrs-bulletin/article/abs/overview-of-phasechange-chalcogenide-nonvolatile-memory-technology/91060FF69176FEC7222376C1E3FA1FC3|journal=MRS Bulletin|language=en|volume=29|issue=11|pages=829–832|doi=10.1557/mrs2004.236|s2cid=137902404 |issn=1938-1425|url-access=subscription}}</ref><ref>{{Cite book|last1=Pirovano|first1=A.|last2=Lacaita|first2=A.L.|last3=Benvenuti|first3=A.|last4=Pellizzer|first4=F.|last5=Hudgens|first5=S.|last6=Bez|first6=R.|title=IEEE International Electron Devices Meeting 2003 |chapter=Scaling analysis of phase-change memory technology |date=December 2003|chapter-url=https://ieeexplore.ieee.org/document/1269376|pages=29.6.1–29.6.4|doi=10.1109/IEDM.2003.1269376|isbn=0-7803-7872-5 |s2cid=1130884 }}</ref>