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Phase-change memory
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===BAE device=== PRAM is also a promising technology in the military and aerospace industries where radiation effects make the use of standard [[Non-volatile memory|non-volatile memories]] such as flash impractical. PRAM devices have been introduced by [[BAE Systems]], referred to as C-RAM, claiming excellent radiation tolerance ([[rad-hard]]) and [[latchup]] immunity. In addition, BAE claims a write cycle endurance of 10<sup>8</sup>, which will allow it to be a contender for replacing [[Programmable read-only memory|PROM]]s and [[EEPROM]]s in space systems.
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