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Pro Electron
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===The second letter denotes the intended use=== {|class="wikitable" |- ! 2nd letter !! Usage !! Example |- |A||Low-power/small-signal diode || AA119, BA121 |- |B||[[Varicap|Varicap diode]] ||BB105G |- |C||Small signal transistor, R<sub>thJC</sub> > 15K/W || BC546C |- |D||High-power, low-frequency power transistor, R<sub>thJC</sub> β€ 15K/W || BD139 |- |E||[[Tunnel diode|Tunnel (Esaki-)diode]] || AE100 |- |F||Low-power, [[Radio Frequency|RF]] (high-frequency) [[BJT|bipolar]] or [[FET]], R<sub>thJC</sub> > 15K/W || BF245 |- |G||[[Hybrid integrated circuit|Hybrid device]] || BGY32, BGY585 |- |H||[[Hall effect sensor]]/diode || |- |L||High-frequency, high-power transistor (for transmitters), R<sub>thJC</sub> β€ 15K/W || BLW34 |- |M||[[Ring modulation|Ring modulator]]-type [[frequency mixer]] || |- |N||[[Opto-isolator]] || CNY17 |- |P||Radiation detector ([[photodiode]], [[phototransistor]])|| BPW34 |- |Q||Radiation generator ([[Light-emitting diode|LED]])|| CQY99 |- |R||Low-power control or switching device: [[thyristor]]s, [[diac]]s, [[TRIAC|triac]]s, [[Unijunction transistor|UJT]]s, programmable unijunction transistors (PUT), silicon bidirectional switch (SBS), opto-triacs etc. || BR100 |- |S||Low-power switching transistor, bipolar or [[MOSFET]], R<sub>thJC</sub> > 15K/W || BS170 |- |T||High-power control or switching device: [[thyristor]]s, [[TRIAC]]s, silicon bidirectional switch (SBS), etc. || BT138 |- |U||High-power switching transistors, bipolar or [[MOSFET]], R<sub>thJC</sub> β€ 15K/W || BU508, BUZ11 |- |V||[[Antenna (radio)|Antenna]] || |- |W||[[Surface acoustic wave#Application in electronic components|Surface-acoustic-wave device]] || |- |X||[[Frequency multiplier]]: [[varactor]], [[step recovery diode]] || |- |Y||High-power rectifying diode || BY228 |- |Z||[[Avalanche diode|Avalanche]], [[Transient voltage suppressor|TVS]], [[Zener diode|Zener]] diode || BZY91 |}
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