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Stokes shift
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=== Optoelectronic devices === In direct-bandgap thin-film semiconducting layers Stokes shifted emission can originate from three main sources: doping, strain, and disorder.<ref>{{Cite journal |author1=Pavel V. Kolesnichenko |author2=Qianhui Zhang |author3=Tinghe Yun |author4=Changxi Zheng |author5=Michael S. Fuhrer |author5-link=Michael Fuhrer |author6=Jeffrey A. Davis |year=2020 |title=Disentangling the effects of doping, strain and disorder in monolayer WS2 by optical spectroscopy |url=https://iopscience.iop.org/article/10.1088/2053-1583/ab626a |journal=[[2D Materials (journal)|2D Materials]] |volume=7 |issue=2 |pages=025008 |arxiv=1909.08214 |doi=10.1088/2053-1583/ab626a |s2cid=202661069}}</ref> Each of these factors can introduce variations in the energy levels of the semiconductor material, leading to a shift in the emitted light towards longer wavelengths compared to the incident light. This phenomenon is particularly relevant in optoelectronic devices where controlling these factors can be crucial for optimizing device performance.
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