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Synchronous dynamic random-access memory
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=== Commands === The SDR SDRAM commands are defined as follows: {| class="wikitable" style="text-align:center" ! {{overline|CS}} || {{overline|RAS}} || {{overline|CAS}} || {{overline|WE}} || BA''n'' || A10 || A''n'' || Command |- |bgcolor=#ffcccc| H ||bgcolor=lightgrey| x ||bgcolor=lightgrey| x ||bgcolor=lightgrey| x ||bgcolor=lightgrey| x ||bgcolor=lightgrey| x ||bgcolor=lightgrey| x ||align="left"| Command inhibit (no operation) |- |bgcolor=#ccffcc| L ||bgcolor=#ffcccc| H ||bgcolor=#ffcccc| H ||bgcolor=#ffcccc| H ||bgcolor=lightgrey| x ||bgcolor=lightgrey| x ||bgcolor=lightgrey| x ||align="left"| No operation |- |bgcolor=#ccffcc| L ||bgcolor=#ffcccc| H ||bgcolor=#ffcccc| H ||bgcolor=#ccffcc| L ||bgcolor=lightgrey| x ||bgcolor=lightgrey| x ||bgcolor=lightgrey| x ||align="left"| Burst terminate: stop a burst read or burst write in progress |- |bgcolor=#ccffcc| L ||bgcolor=#ffcccc| H ||bgcolor=#ccffcc| L ||bgcolor=#ffcccc| H || bank ||bgcolor=#ccffcc| L || column ||align="left"| Read: read a burst of data from the currently active row |- |bgcolor=#ccffcc| L ||bgcolor=#ffcccc| H ||bgcolor=#ccffcc| L ||bgcolor=#ffcccc| H || bank ||bgcolor=#ffcccc| H || column ||align="left"| Read with auto precharge: as above, and precharge (close row) when done |- |bgcolor=#ccffcc| L ||bgcolor=#ffcccc| H ||bgcolor=#ccffcc| L ||bgcolor=#ccffcc| L || bank ||bgcolor=#ccffcc| L || column ||align="left"| Write: write a burst of data to the currently active row |- |bgcolor=#ccffcc| L ||bgcolor=#ffcccc| H ||bgcolor=#ccffcc| L ||bgcolor=#ccffcc| L || bank ||bgcolor=#ffcccc| H || column ||align="left"| Write with auto precharge: as above, and precharge (close row) when done |- |bgcolor=#ccffcc| L ||bgcolor=#ccffcc| L ||bgcolor=#ffcccc| H ||bgcolor=#ffcccc| H || bank ||colspan="2"| row ||align="left"| Active (activate): open a row for read and write commands |- |bgcolor=#ccffcc| L ||bgcolor=#ccffcc| L ||bgcolor=#ffcccc| H ||bgcolor=#ccffcc| L || bank ||bgcolor=#ccffcc| L ||bgcolor=lightgrey| x ||align="left"| Precharge: deactivate (close) the current row of selected bank |- |bgcolor=#ccffcc| L ||bgcolor=#ccffcc| L ||bgcolor=#ffcccc| H ||bgcolor=#ccffcc| L ||bgcolor=lightgrey| x ||bgcolor=#ffcccc| H ||bgcolor=lightgrey| x ||align="left"| Precharge all: deactivate (close) the current row of all banks |- |bgcolor=#ccffcc| L ||bgcolor=#ccffcc| L ||bgcolor=#ccffcc| L ||bgcolor=#ffcccc| H ||bgcolor=lightgrey| x ||bgcolor=lightgrey| x ||bgcolor=lightgrey| x ||align="left"| Auto refresh: refresh one row of each bank, using an internal counter. All banks must be precharged. |- |bgcolor=#ccffcc| L ||bgcolor=#ccffcc| L ||bgcolor=#ccffcc| L ||bgcolor=#ccffcc| L || 0 0 ||colspan="2"| mode ||align="left"| Load mode register: A0 through A9 are loaded to configure the DRAM chip.<br/>The most significant settings are CAS latency (2 or 3 cycles) and burst length (1, 2, 4 or 8 cycles) |} All SDRAM generations (SDR and DDRx) use essentially the same commands, with the changes being: * Additional address bits to support larger devices * Additional bank select bits * Wider mode registers (DDR2 and up use 13 bits, A0βA12) * Additional extended mode registers (selected by the bank address bits) * DDR2 deletes the burst terminate command; DDR3 reassigns it as "ZQ calibration" * DDR3 and DDR4 use A12 during read and write command to indicate "burst chop", half-length data transfer * [[DDR4#Command encoding|DDR4 changes the encoding]] of the activate command. A new signal {{overline|ACT}} controls it, during which the other control lines are used as row address bits 16, 15 and 14. When {{overline|ACT}} is high, other commands are the same as above.
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