Editing Electromigration (section)

=== Thermal effects ===
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In an ideal conductor, where atoms are arranged in a perfect [[crystal structure|lattice]] structure, the electrons moving through it would experience no collisions and electromigration would not occur.  In real conductors, defects in the lattice structure and the random thermal vibration of the atoms about their positions causes electrons to collide with the atoms and [[scattering|scatter]], which is the source of electrical resistance (at least in metals; see [[electrical conduction]]).  Normally, the amount of momentum imparted by the relatively low-[[mass]] electrons is not enough to permanently displace the atoms.  However, in high-power situations (such as with the increasing current draw and decreasing wire sizes in modern [[VLSI]] [[microprocessor]]s), if many electrons bombard the atoms with enough force to become significant, this will accelerate the process of electromigration by causing the atoms of the conductor to vibrate further from their ideal lattice positions, increasing the amount of electron [[scattering]].  High [[Current (electricity)|current density]] increases the number of electrons scattering against the atoms of the conductor, and hence the rate at which those atoms are displaced.

In integrated circuits, electromigration does not occur in [[semiconductor]]s directly, but in the metal interconnects deposited onto them (see [[Fabrication (semiconductor)|semiconductor device fabrication]]).

Electromigration is exacerbated by high current densities and the [[Joule heating]] of the conductor (see [[electrical resistance]]), and can lead to eventual failure of electrical components. Localized increase of current density is known as [[current crowding]].