Editing Electron mobility (section)

==Examples==
Typical electron mobility at room temperature (300 K) in metals like [[gold]], [[copper]] and [[silver]] is 30–50&nbsp;cm<sup>2</sup>/(V⋅s). Carrier mobility in semiconductors is doping dependent. In [[silicon]] (Si) the electron mobility is of the order of 1,000, in germanium around 4,000, and in gallium arsenide up to 10,000&nbsp;cm<sup>2</sup>/(V⋅s). Hole mobilities are generally lower and range from around 100&nbsp;cm<sup>2</sup>/(V⋅s) in gallium arsenide, to 450 in silicon, and 2,000 in germanium.<ref name=":0">{{Cite web|title=NSM Archive - Physical Properties of Semiconductors|url=http://www.matprop.ru/|access-date=2020-07-25|website=www.matprop.ru}}</ref>

Very high mobility has been found in several ultrapure low-dimensional systems, such as two-dimensional electron gases ([[2DEG]]) (35,000,000&nbsp;cm<sup>2</sup>/(V⋅s) at low temperature),<ref name=":1">{{cite journal|last1=Umansky|first1=V.| last2=Heiblum| first2=M.| last3=Levinson|first3=Y.|last4=Smet|first4=J.|last5=Nübler|first5=J.|last6=Dolev|first6=M.|title=MBE growth of ultra-low disorder 2DEG with mobility exceeding 35×106 cm2 V−1 s−1|journal=Journal of Crystal Growth|volume=311 |issue=7| pages=1658–1661| year=2009|bibcode = 2009JCrGr.311.1658U |doi = 10.1016/j.jcrysgro.2008.09.151 }}</ref> [[carbon nanotubes]] (100,000&nbsp;cm<sup>2</sup>/(V⋅s) at room temperature)<ref>{{cite journal|last1=Dürkop|first1=T.| last2=Getty|first2=S. A.|last3=Cobas|first3=Enrique|last4=Fuhrer|first4=M. S.|s2cid=45010238|title=Extraordinary Mobility in Semiconducting Carbon Nanotubes|journal=Nano Letters|volume=4|issue=1|pages=35|year=2004|doi=10.1021/nl034841q|bibcode = 2004NanoL...4...35D }}</ref> and freestanding [[graphene]] (200,000&nbsp;cm<sup>2</sup>/(V⋅s) at low temperature).<ref name=":2">{{cite journal|last1=Bolotin| first1=K|last2=Sikes|first2=K|last3=Jiang|first3=Z|last4=Klima|first4=M|last5=Fudenberg|first5=G| last6=Hone|first6=J| last7=Kim|first7=P|last8=Stormer|first8=H|title=Ultrahigh electron mobility in suspended graphene| journal=Solid State Communications| volume=146|issue=9|pages=351–355|year=2008| doi=10.1016/j.ssc.2008.02.024| arxiv=0802.2389 |bibcode = 2008SSCom.146..351B | s2cid=118392999}}</ref> [[Organic semiconductor]]s ([[polymer]], [[oligomer]]) developed thus far have carrier mobilities below 50&nbsp;cm<sup>2</sup>/(V⋅s), and typically below 1, with well performing materials measured below 10.<ref>{{cite journal |last1=Nawrocki |first1=Robert |title=300-nm Imperceptible, Ultraflexible, and Biocompatible e-Skin Fit with Tactile Sensors and Organic Transistors |journal=Advanced Electronic Materials |date=2016 |volume=2 |issue=4 |pages=1500452 |doi=10.1002/aelm.201500452|doi-access=free |s2cid=138355533 }}</ref>
{| class="wikitable sortable"
|+List of highest measured mobilities&nbsp;[cm<sup>2</sup>/(V⋅s)]
!Material
!Electron mobility
!Hole mobility
|-
|AlGaAs/GaAs heterostructures
|35,000,000<ref name=":1" />
|5,800,000<ref>{{cite journal | vauthors=((Chung, Y. J.)), ((Wang, C.)), ((Singh, S. K.)), ((Gupta, A.)), ((Baldwin, K. W.)), ((West, K. W.)), ((Shayegan, M.)), ((Pfeiffer, L. N.)), ((Winkler, R.)) | journal=Physical Review Materials | title=Record-quality GaAs two-dimensional hole systems | volume=6 | issue=3 | pages=034005 | date=14 March 2022 | issn=2475-9953 | doi=10.1103/PhysRevMaterials.6.034005| arxiv=2203.10713 | bibcode=2022PhRvM...6c4005C }}</ref>
|-
|Freestanding graphene
|200,000<ref name=":2" />
|
|-
|Carbon nanotubes
|79,000<ref name="DurkopGetty2004">{{cite journal|last1=Dürkop|first1=T.|last2=Getty|first2=S. A.|last3=Cobas|first3=Enrique |last4=Fuhrer|first4=M. S.|s2cid=45010238|title=Extraordinary Mobility in Semiconducting Carbon Nanotubes|journal=Nano Letters |volume=4|issue=1|year=2004|pages=35–39|doi=10.1021/nl034841q|bibcode=2004NanoL...4...35D}}</ref><ref name="SnowCampbell2005">{{cite journal|last1=Snow|first1=E. S.|last2=Campbell|first2=P. M.|last3=Ancona|first3=M. G.|last4=Novak|first4=J. P.|title=High-mobility carbon-nanotube thin-film transistors on a polymeric substrate|journal=Applied Physics Letters| volume=86| issue=3| year=2005|pages=033105|issn=0003-6951|doi=10.1063/1.1854721|bibcode=2005ApPhL..86c3105S|url=http://www.dtic.mil/get-tr-doc/pdf?AD=ADA573996|archive-url=https://web.archive.org/web/20170924194648/http://www.dtic.mil/get-tr-doc/pdf?AD=ADA573996|url-status=dead|archive-date=September 24, 2017|url-access=subscription}}</ref>
|
|-
|Cubic boron arsenide (c-BAs)
|1,600<ref>{{cite journal | url=https://www.science.org/doi/10.1126/science.abn4290 | doi=10.1126/science.abn4290 | title=High ambipolar mobility in cubic boron arsenide | year=2022 | last1=Shin | first1=Jungwoo | last2=Gamage | first2=Geethal Amila | last3=Ding | first3=Zhiwei | last4=Chen | first4=Ke | last5=Tian | first5=Fei | last6=Qian | first6=Xin | last7=Zhou | first7=Jiawei | last8=Lee | first8=Hwijong | last9=Zhou | first9=Jianshi | last10=Shi | first10=Li | last11=Nguyen | first11=Thanh | last12=Han | first12=Fei | last13=Li | first13=Mingda | last14=Broido | first14=David | last15=Schmidt | first15=Aaron | last16=Ren | first16=Zhifeng | last17=Chen | first17=Gang | journal=Science | volume=377 | issue=6604 | pages=437–440 | pmid=35862526 | bibcode=2022Sci...377..437S | s2cid=250952849 | url-access=subscription }}</ref>
|
|-
|Crystalline silicon
|1,400<ref name=":0" />
|450<ref name=":0" />
|-
|Polycrystalline silicon
|100
|
|-
|Metals (Al, Au, Cu, Ag)
|10–50
|
|-
|2D material (MoS<sub>2</sub>)
|10–50
|
|-
|Organics
|8.6<ref>{{cite journal|first1=Tao|last1=He|first2=Matthias|last2=Stolte|first3=Frank|last3=Würthner|title=Air-Stable n-Channel Organic Single Crystal Field-Effect Transistors Based on Microribbons of Core-Chlorinated Naphthalene Diimide |journal=Advanced Materials |date=2013-12-23|volume=25|issue=48|pages=6951–6955|doi=10.1002/adma.201303392|pmid=24105872|bibcode=2013AdM....25.6951H |doi-access=free}}</ref>
|43<ref>{{cite journal |last1=Yuan |first1=Yongbo |title=Ultra-high mobility transparent organic thin film transistors grown by an off-centre spin-coating method |journal=Nature Communications |date=2014 |volume=5 |page=3005 |doi=10.1038/ncomms4005| pmid=24398476 |bibcode=2014NatCo...5.3005Y |doi-access=free }}</ref>
|-
|Amorphous silicon
|~1<ref>{{cite journal |last1=Heremans |first1=Paul |title=Mechanical and Electronic Properties of Thin-Film Transistors on Plastic, and Their Integration in Flexible Electronic Applications |journal=Advanced Materials |date=2015 |volume=28 |issue=22 |pages=4266–4282|doi=10.1002/adma.201504360|pmid=26707947 |s2cid=25457390 }}</ref>
|
|}