Editing Emotion Engine (section)

== Fabrication ==
The Emotion Engine contained 13.5 million [[metal–oxide–semiconductor]] (MOS) transistors,<ref name ="hennessy">{{cite book|last1=Hennessy|first1=John L. |author-link1=John L. Hennessy |last2=Patterson|first2=David A. |author-link2=David Patterson (scientist)|title=Computer Architecture: A Quantitative Approach|url=https://books.google.com/books?id=XX69oNsazH4C&pg=PA491|access-date=9 April 2013|edition=3|date=29 May 2002|publisher=Morgan Kaufmann|isbn=978-0-08-050252-6|page=491}}</ref> on an [[integrated circuit]] (IC) die measuring 240&nbsp;mm<sup>2</sup>.<ref>{{cite journal |last1=Diefendorff |first1=Keith |s2cid=29649747 |title=Sony's Emotionally Charged Chip: Killer Floating-Point "Emotion Engine" To Power PlayStation 2000 |journal=[[Microprocessor Report]] |date=April 19, 1999 |volume=13 |issue=5 }}</ref> It was fabricated by Sony and Toshiba in a [[250 nanometer|0.25&nbsp;μm]] ([[180 nanometer|0.18&nbsp;μm]] effective [[List of semiconductor scale examples|L<sub>G</sub>]]) [[complementary metal&ndash;oxide&ndash;semiconductor]] (CMOS) process with four levels of interconnect.