Editing Indium tin oxide (section)

===Chemical shaving for very thin films===
There has been numerical modeling of [[plasmonic]] metallic nanostructures have shown great potential as a method of light management in thin-film nanodisc-patterned [[hydrogenated amorphous silicon]] (a-Si:H) solar [[photovoltaic]] (PV) cells. A problem that arises for plasmonic-enhanced PV devices is the requirement for 'ultra-thin' transparent conducting oxides (TCOs) with high transmittance and low enough resistivity to be used as device top contacts/electrodes. Unfortunately, most work on TCOs is on relatively thick layers and the few reported cases of thin TCO showed a marked decrease in conductivity. To overcome this it is possible to first grow a thick layer and then chemically shave it down to obtain a thin layer that is whole and highly conductive.<ref>{{cite journal |last1=Gwamuri |first1=Jephias |last2=Vora |first2=Ankit |last3=Mayandi |first3=Jeyanthinath |last4=Güney |first4=Durdu Ö. |last5=Bergstrom |first5=Paul L. |last6=Pearce |first6=Joshua M. |title=A new method of preparing highly conductive ultra-thin indium tin oxide for plasmonic-enhanced thin film solar photovoltaic devices |journal=Solar Energy Materials and Solar Cells |date=May 2016 |volume=149 |pages=250–257 |doi=10.1016/j.solmat.2016.01.028 |doi-access=free |bibcode=2016SEMSC.149..250G }}</ref>