Editing Magnetoresistive RAM (section)

===Overall===
MRAM has similar performance to SRAM, enabled by the use of sufficient write current. However, this dependence on write current also makes it a challenge to compete with the higher density comparable to mainstream DRAM and Flash. Nevertheless, some opportunities for MRAM exist where density need not be maximized. From a fundamental physics point of view, the spin-transfer torque approach to MRAM is bound to a "rectangle of death" formed by retention, endurance, speed, and power requirements, as covered above.

{| class="wikitable"
|-
! Design parameter level
! Retention
! Endurance
! Speed
! Power
|-
| High write current
| +
| − (breakdown)
| +
| −
|-
| Low write current
| −
| − (read disturb)
| −
| +
|-
| High Δ
| +
| − (breakdown)
| −
| − (higher current)
|-
| Low Δ
| −
| − (read disturb)
| +
| + (lower current)
|}

While the power-speed tradeoff is universal for electronic devices, the endurance-retention tradeoff at high current and the degradation of both at low Δ is problematic. Endurance is largely limited to 10<sup>8</sup> cycles.<ref>{{cite web | url=http://www.electronicdesign.com/industrial-automation/unleashing-mram-persistent-memory | title=StackPath | date=21 March 2018 }}</ref>