Editing Flash memory (section)

===Fowler–Nordheim tunneling===
{{Main|Fowler–Nordheim tunneling}}

The process of moving electrons from the control gate and into the floating gate is called [[Fowler–Nordheim tunneling]], and it fundamentally changes the characteristics of the cell by increasing the MOSFET's threshold voltage. This, in turn, changes the drain-source current that flows through the transistor for a given gate voltage, which is ultimately used to encode a binary value. The Fowler-Nordheim tunneling effect is reversible, so electrons can be added to or removed from the floating gate, processes traditionally known as writing and erasing.<ref name="hyperstone-20180417">{{Cite web |date=17 April 2018 |title=Solid State bit density, and the Flash Memory Controller |url=https://www.hyperstone.com/en/Solid-State-bit-density-and-the-Flash-Memory-Controller-1235,12728.html |url-status=live |archive-url=https://web.archive.org/web/20230609075731/https://www.hyperstone.com/en/Solid-State-bit-density-and-the-Flash-Memory-Controller-1235,12728.html |archive-date=9 June 2023 |access-date=29 May 2018 |website=hyperstone.com }}</ref>