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Insulated-gate bipolar transistor
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==IGBT failure mechanisms== The failure mechanisms of IGBTs includes overstress (O) and wearout (wo) separately. The wearout failures mainly include bias temperature instability (BTI), hot carrier injection (HCI), time-dependent dielectric breakdown (TDDB), electromigration (ECM), solder fatigue, material reconstruction, corrosion. The overstress failures mainly include electrostatic discharge (ESD), latch-up, avalanche, secondary breakdown, wire-bond liftoff and burnout.<ref>{{cite journal |last1=Patil |first1=N. |last2=Celaya |first2=J. |last3=Das |first3=D. |last4=Goebel |first4=K. |last5=Pecht |first5=M. |title=Precursor Parameter Identification for Insulated Gate Bipolar Transistor (IGBT) Prognostics |journal=IEEE Transactions on Reliability |date=June 2009 |volume=58 |issue=2 |pages=271β276 |doi=10.1109/TR.2009.2020134 |s2cid=206772637 }}</ref>
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