Editing MOSFET (section)

====Triode mode or linear region (also known as the ohmic mode){{anchor|Linear mode}}====

Criteria: <math>V_\text{GS} > V_\text{th}</math> and <math>V_\text{DS} < (V_\text{GS} - V_\text{th}) .</math>

The transistor is turned on, and a channel has been created which allows current between the drain and the source. The MOSFET operates like a resistor, controlled by the gate voltage relative to both the source and drain voltages. The current from drain to source is modeled as:

<math display="block">I_\text{D} = \mu_n C_\text{ox}\frac{W}{L} \left( \left(V_\text{GS} - V_{\rm th}\right)V_\text{DS} - \frac{{V_\text{DS}}^2}{2} \right) ,</math>

where <math>\mu_n</math> is the charge-carrier effective mobility, <math>W</math> is the gate width, <math>L</math> is the gate length and <math>C_\text{ox}</math> is the gate oxide capacitance per unit area. The transition from the exponential subthreshold region to the triode region is not as sharp as the equations suggest.<ref name=Schneider>{{ cite book | first1 =C. |last1=Galup-Montoro |last2=Schneider|first2=M. C. |name-list-style=amp | title=MOSFET modeling for circuit analysis and design | year = 2007 | page=83 | publisher=World Scientific | location = London/Singapore | isbn=978-981-256-810-6 | url = http://worldcat.org/isbn/981-256-810-7}}</ref><ref name=Malik>{{ cite book | first = Norbert R.|last= Malik | title = Electronic circuits: analysis, simulation, and design | year = 1995 | pages=315–316 | publisher=Prentice Hall | location = Englewood Cliffs, New Jersey | isbn=978-0-02-374910-0 | url = http://worldcat.org/isbn/0-02-374910-5 }}</ref>{{verify source|reason=Citations were unhelpfully attached to the heading. Please move to indicate which claims they support, or leave here if the whole section|date=January 2023}}