Editing Magnetoresistive RAM (section)

===Alternatives to MRAM===
Flash and EEPROM's limited write-cycles are a serious problem for any real RAM-like role. In addition, the high power needed to write the cells is a problem in low-power nodes, where non-volatile RAM is often used. The power also needs time to be "built up" in a device known as a [[charge pump]], which makes writing dramatically slower than reading, often as low as 1/1000 as fast. While MRAM was certainly designed to address some of these issues, a number of other new memory devices are in production or have been proposed to address these shortcomings.

To date, the only similar system to enter widespread production is [[ferroelectric RAM]], or F-RAM (sometimes referred to as FeRAM).

Also seeing renewed interest are silicon-oxide-nitride-oxide-silicon ([[SONOS]]) memory and [[ReRAM]]. [[3D XPoint]] has also been in development, but is known to have a higher power budget than DRAM.<ref>{{Cite web|url=https://www.tomshardware.com/news/intel-xd-xpoint-dimm-lenovo-thinksystem,36573.html|title=Lenovo Dishes On 3D XPoint DIMMS, Apache Pass In ThinkSystem SD650|first=Paul Alcorn 26|last=February 2018|website=Tom's Hardware|date=26 February 2018}}</ref>