Editing Non-volatile memory (section)

===RRAM memory===
{{Main|Resistive random-access memory}}

RRAM (ReRAM) works by changing the resistance across a dielectric solid-state material often referred to as a memristor. ReRAM involves generating defects in a thin oxide layer, known as oxygen vacancies (oxide bond locations where the oxygen has been removed), which can subsequently charge and drift under an electric field. The motion of oxygen ions and vacancies in the oxide would be analogous to the motion of electrons and holes in a semiconductor.

Although ReRAM was initially seen as a replacement technology for flash memory, the cost and performance benefits of ReRAM have not been enough for companies to proceed with the replacement. Apparently, a broad range of materials can be used for ReRAM. However, the discovery <ref>Lee, H. Y.; Chen, P. S.; Wu, T. Y.; Chen, Y. S.; Wang, C. C.; Tzeng, P. J.; Lin, C. H.; Chen, F.; Lien, C. H.; Tsai, M. J. (2008). Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust Hf{{not a typo}}O2-based RRAM. 2008 IE</ref> that the popular high-κ gate dielectric HfO<sub>2</sub> can be used as a low-voltage ReRAM has encouraged researchers to investigate more possibilities.