Editing Indium phosphide

{{redirect|InP|other uses|INP (disambiguation){{!}}INP}}
{{chembox
| verifiedrevid = 477313377
| ImageFile = InPcrystal.jpg
| ImageFile2 = InP.png
| ImageSize =
| ImageName =
| IUPACName =
| OtherNames = Indium(III) phosphide
|Section1={{Chembox Identifiers
| ChemSpiderID_Ref = {{chemspidercite|correct|chemspider}}
| ChemSpiderID = 28914
| InChI = 1/In.P/rInP/c1-2
| SMILES1 = [In+3].[P-3]
| SMILES2 = [In]#P
| InChIKey = GPXJNWSHGFTCBW-HIYQQWJCAF
| StdInChI_Ref = {{stdinchicite|correct|chemspider}}
| StdInChI = 1S/In.P
| StdInChIKey_Ref = {{stdinchicite|correct|chemspider}}
| StdInChIKey = GPXJNWSHGFTCBW-UHFFFAOYSA-N
| CASNo = 22398-80-7
| CASNo_Ref = {{cascite|correct|CAS}}
| UNII_Ref = {{fdacite|correct|FDA}}
| UNII = SD36LG60G1
| PubChem = 31170
}}
|Section2={{Chembox Properties
| Formula = InP
| MolarMass = 145.792 g/mol
| Appearance = black [[cubic crystal system|cubic]] crystals<ref name=crc/>
| Density = 4.81 g/cm<sup>3</sup>, solid<ref name=crc/>
| MeltingPtC = 1062
| MeltingPt_ref = <ref name=crc>[[#Haynes|Haynes]], p. 4.66</ref>
| BoilingPtC =
| SolubleOther = slightly soluble in [[acid]]s
| BandGap = 1.344 eV (300 K; [[Direct and indirect band gaps|direct]])
| ElectronMobility = 5400 cm<sup>2</sup>/(V·s) (300 K)
| ThermalConductivity = 0.68 W/(cm·K) (300 K)
| RefractIndex = 3.1 (infrared); <br/> 3.55 (632.8 nm)<ref>{{Citation|doi=10.1007/BF00626698|title=The refractive index of InP and its oxide measured by multiple-angle incident ellipsometry|year=1993|last1=Sheng Chao|first1=Tien|last2=Lee|first2=Chung Len|last3=Lei|first3=Tan Fu|journal=Journal of Materials Science Letters|volume=12|pages=721|postscript=.|issue=10|s2cid=137171633}}</ref>
}}
|Section3={{Chembox Structure
| Coordination = Tetrahedral
| CrystalStruct = [[Zincblende (crystal structure)|Zinc blende]]
| LattConst_a = 5.8687 Å <ref>{{cite web|title=Basic Parameters of InP|url=http://www.ioffe.ru/SVA/NSM/Semicond/InP/basic.html|publisher=Ioffe Institute, Russia}}</ref>
}}
|Section4={{Chembox Thermochemistry
| Thermochemistry_ref = <ref>[[#Haynes|Haynes]], p. 5.23</ref>
| DeltaHf = −88.7 [[Kilojoule per mole|kJ/mol]]
| DeltaGf = −77.0 [[Kilojoule per mole|kJ/mol]]
| Entropy = 59.8 J/(mol·K)
| HeatCapacity = 45.4 J/(mol·K)
}}
|Section7={{Chembox Hazards
| ExternalSDS = [https://web.archive.org/web/20061111080639/http://www.espimetals.com/msds's/indiumphosphide.pdf External MSDS]
| MainHazards = Toxic, hydrolysis to [[phosphine]]
| NFPA-H =
| NFPA-F =
| NFPA-R =
| NFPA-S =
| FlashPt =
}}
|Section8={{Chembox Related
| OtherAnions = [[Indium nitride]]<br/>[[Indium arsenide]]<br/>[[Indium antimonide]]
| OtherCations = [[Aluminium phosphide]]<br/>[[Gallium phosphide]]
| OtherCompounds = [[Indium gallium phosphide]]<br/>[[Aluminium gallium indium phosphide]]<br/>[[Gallium indium arsenide antimonide phosphide]]
}}
}}

'''Indium phosphide''' ('''InP''') is a binary [[semiconductor]] composed of [[indium]] and [[phosphorus]]. It has a face-centered cubic ("[[zincblende (crystal structure)|zincblende]]") [[crystal structure]], identical to that of [[gallium arsenide|GaAs]] and most of the [[List of semiconductor materials|III-V semiconductors]].

==Manufacturing==
[[File:Stone Flower (Кам’яна квітка).jpg|thumb|left|Indium phosphide nanocrystalline surface obtained by electrochemical etching and viewed under scanning electron microscope. Artificially colored in image post-processing.]]
Indium phosphide can be prepared from the reaction of [[white phosphorus]] and [[indium iodide]] at 400&nbsp;°C.,<ref>[http://toxnet.nlm.nih.gov/cgi-bin/sis/search/f?./temp/~roYeK3:3:FULL Indium Phosphide at HSDB]. U.S. National Institute of Health</ref> also by direct combination of the purified elements at high temperature and pressure, or by thermal decomposition of a mixture of a trialkyl indium compound and [[phosphine]].<ref>[https://pubchem.ncbi.nlm.nih.gov/compound/indium_phosphide#section=Methods-of-Manufacturing InP manufacture]. U.S. National Institute of Health</ref>

==Applications==
The application fields of InP splits up into three main areas. It is used as the basis for optoelectronic components,<ref>{{Cite web|title=Optoelectronic devices and components – Latest research and news {{!}} Nature|url=https://www.nature.com/subjects/optoelectronic-devices-and-components|access-date=2022-02-22|website=www.nature.com}}</ref> high-speed electronics,<ref>{{Cite web|title=High Speed Electronics|url=https://www.semiconductoronline.com/doc/high-speed-electronics-0001|access-date=2022-02-22|website=www.semiconductoronline.com}}</ref> and photovoltaics<ref>{{Cite web|title=Photovoltaics|url=https://www.seia.org/initiatives/photovoltaics|access-date=2022-02-22|website=SEIA}}</ref>

===High-speed optoelectronics===
InP is used as a substrate for [[epitaxy|epitaxial]] optoelectronic devices based other semiconductors, such as [[indium gallium arsenide]]. The devices include [[pseudomorphic heterojunction bipolar transistor]]s that could operate at 604&nbsp;GHz.<ref>[http://www.azom.com/news.aspx?newsID=2888 Indium Phosphide and Indium Gallium Arsenide Help Break 600 Gigahertz Speed Barrier]. Azom. April 2005</ref>

InP itself has a [[direct bandgap]], making it useful for [[optoelectronics]] devices like [[laser diode]]s and [[photonic integrated circuit]]s for the [[optical telecommunications]] industry, to enable [[wavelength-division multiplexing]] applications.<ref name=":0">[http://www.redherring.com/Home/4817 The Light Brigade] appeared in ''Red Herring'' in 2002. {{webarchive |url=https://web.archive.org/web/20110607095835/http://www.redherring.com/Home/4817 |date=June 7, 2011 }}</ref>  It is used in high-power and high-frequency electronics because of its superior [[electron velocity]] with respect to the more common semiconductors [[silicon]] and [[gallium arsenide]]. 

=== Optical Communications ===
InP is used in lasers, sensitive photodetectors and modulators in the wavelength window typically used for telecommunications, i.e., 1550&nbsp;nm wavelengths, as it is a direct bandgap III-V compound semiconductor material. The wavelength between about 1510&nbsp;nm and 1600&nbsp;nm has the lowest attenuation available on optical fibre (about 0.2&nbsp;dB/km).<ref>{{Cite journal |last1=D’Agostino |first1=Domenico |last2=Carnicella |first2=Giuseppe |last3=Ciminelli |first3=Caterina |last4=Thijs |first4=Peter |last5=Veldhoven |first5=Petrus J. |last6=Ambrosius |first6=Huub |last7=Smit |first7=Meint |date=2015-09-21 |title=Low-loss passive waveguides in a generic InP foundry process via local diffusion of zinc|journal=Optics Express |volume=23 |issue=19 |pages=25143–25157 |doi=10.1364/OE.23.025143 |pmid=26406713 |doi-access=free |bibcode=2015OExpr..2325143D }}</ref> Further, O-band and C-band wavelengths supported by InP facilitate [[Single-mode optical fiber|single-mode operation]], reducing effects of [[Modal dispersion|intermodal dispersion]]. 

===Photovoltaics and optical sensing===
InP can be used in photonic integrated circuits that can generate, amplify, control and detect laser light.<ref>{{Cite book |last=Osgood |first=Richard Jr. |url=https://www.worldcat.org/oclc/1252762727 |title=Principles of photonic integrated circuits : materials, device physics, guided wave design |date=2021 |others=Xiang Meng |publisher=Springer |isbn=978-3-030-65193-0 |oclc=1252762727}}</ref> 

Optical sensing applications of InP include 
*Air pollution control by real-time detection of gases (CO, CO<sub>2</sub>, NO<sub>X</sub> [or NO + NO<sub>2</sub>], etc.).
*Quick verification of traces of toxic substances in gases and liquids, including tap water, or surface contaminations.
*Spectroscopy for non-destructive control of product, such as food. Researchers of [[Eindhoven University of Technology]] and MantiSpectra have already demonstrated the application of an integrated near-infrared spectral sensor for milk.<ref>{{Cite journal |last1=Hakkel |first1=Kaylee D. |last2=Petruzzella |first2=Maurangelo |last3=Ou |first3=Fang |last4=van Klinken |first4=Anne |last5=Pagliano |first5=Francesco |last6=Liu |first6=Tianran |last7=van Veldhoven |first7=Rene P. J. |last8=Fiore |first8=Andrea |date=2022-01-10 |title=Integrated near-infrared spectral sensing |journal=Nature Communications|volume=13 |issue=1 |pages=103 |doi=10.1038/s41467-021-27662-1 |pmc=8748443 |pmid=35013200|bibcode=2022NatCo..13..103H }}</ref> In addition, it has been proven that this technology can also be applied to plastics and illicit drugs.<ref>{{Cite journal |last1=Kranenburg |first1=Ruben F. |last2=Ou |first2=Fang |last3=Sevo |first3=Petar |last4=Petruzzella |first4=Maurangelo |last5=de Ridder |first5=Renee |last6=van Klinken |first6=Anne |last7=Hakkel |first7=Kaylee D. |last8=van Elst |first8=Don M. J. |last9=van Veldhoven |first9=René |last10=Pagliano |first10=Francesco |last11=van Asten |first11=Arian C. |last12=Fiore |first12=Andrea |date=2022-08-01 |title=On-site illicit-drug detection with an integrated near-infrared spectral sensor: A proof of concept |journal=Talanta |volume=245 |pages=123441 |doi=10.1016/j.talanta.2022.123441 |pmid=35405444 |s2cid=247986674 |doi-access=free }}</ref>

==References==
{{reflist}}

==Cited sources==
*{{cite book |ref=Haynes| editor= Haynes, William M. | date = 2016| title = [[CRC Handbook of Chemistry and Physics]] | edition = 97th | publisher = [[CRC Press]] | isbn = 9781498754293}}

==External links==
*[https://web.archive.org/web/20160601082034/http://www.ioffe.ru/SVA/NSM/Semicond/InP/index.html Extensive site on the physical properties of indium phosphide] (Ioffe institute)
**[http://www.ioffe.ru/SVA/NSM/Semicond/InP/Figs/821.gif Band structure and carrier concentration of InP.]
*[https://web.archive.org/web/20070923081702/http://ieeexplore.ieee.org/xpl/RecentCon.jsp?puNumber=3525 InP conference series] at IEEE
*[http://www.semiconductor-today.com/features/Semiconductor%20Today%20-%20Transcending%20frequency%20and%20integration%20limits.pdf Indium Phosphide: Transcending frequency and integration limits. Semiconductor TODAY Compounds&AdvancedSilicon • Vol. 1 • Issue 3 • September 2006]

{{Indium compounds}}
{{Phosphorus compounds}}
{{Phosphides}}

[[Category:Phosphides]]
[[Category:Indium compounds]]
[[Category:Inorganic phosphorus compounds]]
[[Category:Optoelectronics]]
[[Category:III-V semiconductors]]
[[Category:III-V compounds]]
[[Category:IARC Group 2A carcinogens]]
[[Category:Zincblende crystal structure]]